Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Shreter, Y. G.Hopping conductivity and dielectric relaxation in schottky barriers on GaN Semiconductors, 51(9), 1186-1193 (2017).
Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., . . . Shreter, Y. G..On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire. Semiconductors, 51(1), 115-121. (2017).
Bochkareva, N.I., Ivanov, A.M., Klochkov, A.V., Kogotkov, V.S., Rebane, Y.T., Virko, M.V., Shreter, Y.G.Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs Semiconductors 49 (6), pp. 827-835 (2015).
Bochkareva, N.I., Rebane, Y.T., Shreter, Y.G.Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodesApplied Physics Letters 103 (19), 191101 (2013).
Voronenkov, V., Bochkareva, N., Gorbunov, R., Latyshev, P., Lelikov, Y., Rebane, Y., Tsyuk, A., Zubrilov, A., Shreter, Y.Nature of V-shaped defects in GaNJapanese Journal of Applied Physics 52 (8 PART 2), 08JE14 (2013).
Voronenkov, V.V., Bochkareva, N.I., Gorbunov, R.I., Latyshev, P.E., Lelikov, Y.S., Rebane, Y.T., Tsyuk, A.I., Zubrilov, A.S., Popp, U.W., Strafela, M., Strunk, H.P., Shreter, Y.G.Two modes of HVPE growth of GaN and related macrodefects Physica Status Solidi (C) Current Topics in Solid State Physics 10 (3), pp. 468-471 (2013).
Bochkareva, N.I., Voronenkov, V.V., Gorbunov, R.I., Zubrilov, A.S., Latyshev, P.E., Lelikov, Y.S., Rebane, Y.T., Tsyuk, A.I., Shreter, Y.G.Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density Semiconductors 46 (8), pp. 1032-1039 (2012).
Efremov, A.A., Bochkareva, N.I., Gorbunov, R.I., Lavrinovich, D.A., Rebane, Yu.T., Tarkhin, D.V., Shreter, Yu.G.Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs Semiconductors 40 (5), pp. 605-610 (2006).
Shreter Y.G., Rebane Y.T. Dislocation-related luminescence in GaN, 23rd Int. Conf. On the Physics of Semiconductors, Berlin, 1996, v. 4, p. 2937, World Scientific, Singapure-New Jersey-London-Hong Kong
Rebane, Y.T.Shreter Y.G. Nature of dislocation-related luminescence in diamond, zinc-blend and wurzite-type semiconductors, 1996, Inst. Phys. Conf. Ser No 155, Capter 9, p. 703-706
Rebane, Y.T.Shreter Y.G., Albrecht M. Stacking faults as quantum wells for electrons in wurtzite GaN, Phys.Stat.Sol.(a), 1997, v. 164, p. 141.
Bower, K. E., Barbanel, Y. A., Shreter, Y. G., & Bohnert, G. W. (Eds.). Polymers, phosphors, and voltaics for radioisotope microbatteries. CRC press. (2002).
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